auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.23 EUR |
| 10+ | 17.64 EUR |
| 120+ | 17.23 EUR |
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Technische Details IXTT30N50L2 IXYS
Description: MOSFET N-CH 500V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V.
Weitere Produktangebote IXTT30N50L2 nach Preis ab 15.7 EUR bis 28.35 EUR
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IXTT30N50L2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 30A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT30N50L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 30A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT30N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO268 On-state resistance: 0.215Ω Mounting: SMD Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |