IXTT30N60L2 Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.22 EUR |
| 30+ | 20.67 EUR |
| 120+ | 18.79 EUR |
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Technische Details IXTT30N60L2 Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Weitere Produktangebote IXTT30N60L2 nach Preis ab 22.33 EUR bis 31.45 EUR
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IXTT30N60L2 | Hersteller : IXYS |
 MOSFETs 30 Amps 600V |
auf Bestellung 562 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT30N60L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT30N60L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Gate charge: 335nC Technology: Linear L2™ Reverse recovery time: 710ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT30N60L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Gate charge: 335nC Technology: Linear L2™ Reverse recovery time: 710ns |
Produkt ist nicht verfügbar |