IXTT30N60P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Technische Details IXTT30N60P IXYS
Description: MOSFET N-CH 600V 30A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXTT30N60P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTT30N60P | Hersteller : IXYS |
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds |
Produkt ist nicht verfügbar |
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IXTT30N60P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Power dissipation: 540W Features of semiconductor devices: standard power mosfet Gate charge: 82nC |
Produkt ist nicht verfügbar |