IXTT360N055T2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 55V 360A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.07 EUR |
| 30+ | 12.8 EUR |
| 120+ | 10.99 EUR |
| 510+ | 10.66 EUR |
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Technische Details IXTT360N055T2 Littelfuse Inc.
Description: MOSFET N-CH 55V 360A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXTT360N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTT360N055T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO268 On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT360N055T2 | Hersteller : IXYS |
MOSFETs 360Amps 55V |
Produkt ist nicht verfügbar |
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IXTT360N055T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO268 On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
Produkt ist nicht verfügbar |