auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 81.51 EUR |
| 10+ | 72.62 EUR |
| 30+ | 70.24 EUR |
| 60+ | 67.36 EUR |
| 120+ | 63.75 EUR |
| 270+ | 61.48 EUR |
| 510+ | 60.84 EUR |
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Technische Details IXTT3N200P3HV IXYS
Description: MOSFET N-CH 2000V 3A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V.
Weitere Produktangebote IXTT3N200P3HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTT3N200P3HV | Hersteller : Littelfuse |
 Power Mosfet |
Produkt ist nicht verfügbar |
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| IXTT3N200P3HV | Hersteller : IXYS | IXTT3N200P3HV SMD N channel transistors |
Produkt ist nicht verfügbar |
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IXTT3N200P3HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 2000V 3A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268HV (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V |
Produkt ist nicht verfügbar |