IXTT40N50L2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 500V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.28 EUR |
| 30+ | 20.38 EUR |
| 120+ | 18.53 EUR |
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Technische Details IXTT40N50L2 IXYS
Description: MOSFET N-CH 500V 40A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.
Weitere Produktangebote IXTT40N50L2 nach Preis ab 20.86 EUR bis 32.79 EUR
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IXTT40N50L2 | Hersteller : IXYS |
MOSFETs 40 Amps 500V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT40N50L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 40A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT40N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 0.32µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |