IXTT440N04T4HV IXYS
Hersteller: IXYSDescription: MOSFET N-CH 40V 440A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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Technische Details IXTT440N04T4HV IXYS
Description: MOSFET N-CH 40V 440A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V.
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IXTT440N04T4HV | Hersteller : IXYS |
MOSFETs 40V/440A TrenchT4 Power MOSFET |
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IXTT440N04T4HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 440A Power dissipation: 940W Case: TO268HV On-state resistance: 1.25mΩ Mounting: SMD Gate charge: 480nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 72ns Features of semiconductor devices: thrench gate power mosfet |
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