Technische Details IXTT64N25P Littelfuse
Description: MOSFET N-CH 250V 64A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V.
Weitere Produktangebote IXTT64N25P
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IXTT64N25P | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268 Mounting: SMD Power dissipation: 400W Polarisation: unipolar Kind of package: tube Gate charge: 105nC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 64A On-state resistance: 49mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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IXTT64N25P | Hersteller : IXYS |
Description: MOSFET N-CH 250V 64A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
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IXTT64N25P | Hersteller : IXYS |
MOSFET 64 Amps 250V 0.049 Rds |
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IXTT64N25P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268 Mounting: SMD Power dissipation: 400W Polarisation: unipolar Kind of package: tube Gate charge: 105nC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 64A On-state resistance: 49mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |