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Technische Details IXTT68P20T IXYS
Description: MOSFET P-CH 200V 68A TO268, Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 568W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXTT68P20T nach Preis ab 23.38 EUR bis 41.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTT68P20T | Littelfuse Inc. |
 Description: MOSFET P-CH 200V 68A TO268Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
auf Bestellung 764 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTT68P20T |
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Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 200V 68A TO268
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET P-CH 200V 68A TO268
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 764 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.07 EUR |
| 30+ | 25.87 EUR |
| 120+ | 23.38 EUR |