
IXTT75N10L2 IXYS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
10+ | 13.84 EUR |
30+ | 13.73 EUR |
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Technische Details IXTT75N10L2 IXYS
Description: MOSFET N-CH 100V 75A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V.
Weitere Produktangebote IXTT75N10L2 nach Preis ab 14.3 EUR bis 26.66 EUR
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IXTT75N10L2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 400W Case: TO268 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 215nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns Technology: Linear L2™ |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT75N10L2 | Hersteller : IXYS |
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auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT75N10L2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTT75N10L2 | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V |
Produkt ist nicht verfügbar |