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IXTT88N30P

IXTT88N30P IXYS


pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.67 EUR
6+12.58 EUR
10+12.1 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTT88N30P IXYS

Description: MOSFET N-CH 300V 88A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.

Weitere Produktangebote IXTT88N30P nach Preis ab 12.1 EUR bis 24.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTT88N30P IXTT88N30P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
6+12.58 EUR
10+12.1 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTT88N30P IXTT88N30P Hersteller : IXYS media-3322045.pdf MOSFET 88 Amps 300V 0.04 Rds
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.35 EUR
10+18.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTT88N30P IXTT88N30P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.97 EUR
30+15.29 EUR
120+13.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTT88N30P IXTT88N30P Hersteller : Littelfuse rete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Trans MOSFET N-CH 300V 88A 3-Pin(2+Tab) TO-268
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