IXTT88N30P IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
| Anzahl | Privatkunde |
|---|---|
| 5+ | 19.62 EUR |
| 6+ | 16.78 EUR |
| 10+ | 15.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTT88N30P IXYS
Description: LITTELFUSE - IXTT88N30P - Leistungs-MOSFET, n-Kanal, 300 V, 88 A, 0.04 ohm, TO-268 (D3PAK), Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 300, Dauer-Drainstrom Id: 88, Qualifikation: -, MSL: -, Verlustleistung Pd: 600, Gate-Source-Schwellenspannung, max.: 5, Verlustleistung: 600, Bauform - Transistor: TO-268 (D3PAK), Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: Produktreihe PolarHT, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.04, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.04, SVHC: No SVHC (17-Jan-2022).
Weitere Produktangebote IXTT88N30P nach Preis ab 15.66 EUR bis 29.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTT88N30P | IXYS |
MOSFET 88 Amps 300V 0.04 Rds |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT88N30P | Littelfuse Inc. |
Description: MOSFET N-CH 300V 88A TO268 Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
auf Bestellung 421 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTT88N30P |
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Hersteller: IXYS
MOSFET 88 Amps 300V 0.04 Rds
MOSFET 88 Amps 300V 0.04 Rds
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.41 EUR |
| 10+ | 22.38 EUR |
| IXTT88N30P |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 300V 88A TO268
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.71 EUR |
| 30+ | 18.2 EUR |
| 120+ | 15.66 EUR |