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Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.33 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.14 EUR |
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Technische Details IXTU4N70X2 IXYS
Description: MOSFET N-CH 700V 4A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V.
Weitere Produktangebote IXTU4N70X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTU4N70X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 700V 4A TO251Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTU4N70X2 | Hersteller : IXYS |
MOSFETs TO251 700V 4A N-CH X2CLASS |
Produkt ist nicht verfügbar |