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IXTV26N50PS IXYS

littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf

Hersteller: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube

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Technische Details IXTV26N50PS IXYS

Description: MOSFET N-CH 500V 26A PLUS-220SMD, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PLUS-220SMD, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 460W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PLUS-220SMD, Packaging: Tube.