IXTV30N60PS IXYS

Description: MOSFET N-CH 600V 30A PLUS-220SMD, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS-220SMD, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PLUS-220SMD, Packaging: Tube.