IXTX110N20L2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 200V 110A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.33 EUR |
| 30+ | 35.96 EUR |
| 120+ | 35.83 EUR |
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Technische Details IXTX110N20L2 IXYS
Description: MOSFET N-CH 200V 110A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXTX110N20L2 nach Preis ab 43.49 EUR bis 54.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTX110N20L2 | Hersteller : IXYS |
MOSFETs LINEAR L2 SERIES MOSFET 200V 110A |
auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX110N20L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 110A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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| IXTX110N20L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 110A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXTX110N20L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Technology: Linear L2™ Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |