IXTX120P20T IXYS
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 10+ | 27.04 EUR |
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Technische Details IXTX120P20T IXYS
Description: MOSFET P-CH 200V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PLUS247™-3, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V.
Weitere Produktangebote IXTX120P20T nach Preis ab 29.23 EUR bis 46.24 EUR
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IXTX120P20T | Hersteller : IXYS |
MOSFETs TrenchP Power MOSFETs |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX120P20T | Hersteller : IXYS |
Description: MOSFET P-CH 200V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PLUS247™-3 Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V |
auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) |
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