IXTX120P20T IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 28.1 EUR |
| 10+ | 27.03 EUR |
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Technische Details IXTX120P20T IXYS
Category: THT P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W, Mounting: THT, Case: PLUS247™, Reverse recovery time: 300ns, Drain-source voltage: -200V, Drain current: -120A, On-state resistance: 30mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.04kW, Polarisation: unipolar, Kind of package: tube, Gate charge: 740nC, Technology: TrenchP™, Kind of channel: enhancement, Gate-source voltage: ±15V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTX120P20T nach Preis ab 27.03 EUR bis 47.59 EUR
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IXTX120P20T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Mounting: THT Case: PLUS247™ Reverse recovery time: 300ns Drain-source voltage: -200V Drain current: -120A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX120P20T | Hersteller : IXYS |
MOSFETs TrenchP Power MOSFETs |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX120P20T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 200V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PLUS247™-3 Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V |
auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX120P20T | Hersteller : Littelfuse |
Trans MOSFET P-CH 200V 120A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |