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IXTX170P10P IXYS
Hersteller: IXYSDescription: MOSFET P-CH 100V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.16 EUR |
| 30+ | 27.49 EUR |
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Technische Details IXTX170P10P IXYS
Description: MOSFET P-CH 100V 170A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.
Weitere Produktangebote IXTX170P10P nach Preis ab 25.82 EUR bis 33.55 EUR
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IXTX170P10P | Hersteller : IXYS |
MOSFETs -170.0 Amps -100V 0.012 Rds |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX170P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 170A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXTX170P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns Technology: TrenchP™ Mounting: THT Kind of package: tube Drain-source voltage: -100V Drain current: -170A Gate charge: 240nC Reverse recovery time: 176ns On-state resistance: 14mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 890W Case: PLUS247™ Kind of channel: enhancement Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTX170P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns Technology: TrenchP™ Mounting: THT Kind of package: tube Drain-source voltage: -100V Drain current: -170A Gate charge: 240nC Reverse recovery time: 176ns On-state resistance: 14mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 890W Case: PLUS247™ Kind of channel: enhancement Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |