auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 103.38 EUR |
| 10+ | 97.87 EUR |
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Technische Details IXTX1R4N450HV IXYS
Description: MOSFET N-CH 4500V 1.4A TO247PLUS, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Weitere Produktangebote IXTX1R4N450HV nach Preis ab 89.63 EUR bis 110.83 EUR
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IXTX1R4N450HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 4500V 1.4A TO247PLUS Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: TO-247PLUS-HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTX1R4N450HV | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Case: TO247PLUS-HV Mounting: THT Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 88nC Reverse recovery time: 660ns Drain current: 1.4A Pulsed drain current: 5A Gate-source voltage: ±20V On-state resistance: 40Ω Power dissipation: 960W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXTX1R4N450HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Case: TO247PLUS-HV Mounting: THT Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 88nC Reverse recovery time: 660ns Drain current: 1.4A Pulsed drain current: 5A Gate-source voltage: ±20V On-state resistance: 40Ω Power dissipation: 960W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |