auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.2 EUR |
| 10+ | 35.29 EUR |
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Technische Details IXTX210P10T IXYS
Description: MOSFET P-CH 100V 210A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.
Weitere Produktangebote IXTX210P10T nach Preis ab 29.59 EUR bis 49.54 EUR
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IXTX210P10T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 210A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTX210P10T | Hersteller : IXYS | IXTX210P10T THT P channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX210P10T | Hersteller : Littelfuse |
 Trans MOSFET P-CH 100V 210A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |