| Anzahl | Preis |
|---|---|
| 1+ | 33.39 EUR |
| 10+ | 31.33 EUR |
| 30+ | 27.7 EUR |
| 60+ | 27.21 EUR |
| 120+ | 25.94 EUR |
| 270+ | 24.97 EUR |
| 510+ | 22.26 EUR |
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Technische Details IXTX32P60P IXYS
Description: MOSFET P-CH 600V 32A PLUS247-3, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V.
Weitere Produktangebote IXTX32P60P nach Preis ab 23.37 EUR bis 35.34 EUR
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IXTX32P60P | Hersteller : Littelfuse Inc. |
 Description: MOSFET P-CH 600V 32A PLUS247-3Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V |
auf Bestellung 431 Stücke: Lieferzeit 10-14 Tag (e) |
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