IXTX3N250L IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain current: 3A
Power dissipation: 417W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 230nC
Reverse recovery time: 370ns
On-state resistance: 10Ω
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTX3N250L IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns, Case: PLUS247™, Mounting: THT, Kind of package: tube, Drain current: 3A, Power dissipation: 417W, Drain-source voltage: 2.5kV, Kind of channel: enhancement, Features of semiconductor devices: linear power mosfet, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 230nC, Reverse recovery time: 370ns, On-state resistance: 10Ω, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTX3N250L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| IXTX3N250L | Hersteller : IXYS | MOSFET MOSFET DISCRETE TO-247P |
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IXTX3N250L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns Case: PLUS247™ Mounting: THT Kind of package: tube Drain current: 3A Power dissipation: 417W Drain-source voltage: 2.5kV Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 230nC Reverse recovery time: 370ns On-state resistance: 10Ω |
Produkt ist nicht verfügbar |