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IXTX8N150L

IXTX8N150L IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D38D3CED8BB820&compId=IXTK(X)8N150L.pdf?ci_sign=90c93573bfcdd21862ce04ca99385de8a4c56b66 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Reverse recovery time: 1.7µs
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+42.53 EUR
30+41.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTX8N150L IXYS

Description: MOSFET N-CH 1500V 8A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 8V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V.

Weitere Produktangebote IXTX8N150L nach Preis ab 42.53 EUR bis 62.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTX8N150L IXTX8N150L Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D38D3CED8BB820&compId=IXTK(X)8N150L.pdf?ci_sign=90c93573bfcdd21862ce04ca99385de8a4c56b66 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Reverse recovery time: 1.7µs
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTX8N150L IXTX8N150L Hersteller : IXYS media-3321888.pdf MOSFETs Standard Linear Power MOSFET
auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.25 EUR
10+56.16 EUR
30+51.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTX8N150L IXTX8N150L Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf Description: MOSFET N-CH 1500V 8A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 8V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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