IXTX8N150L IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 42.53 EUR |
| 30+ | 41.36 EUR |
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Technische Details IXTX8N150L IXYS
Description: MOSFET N-CH 1500V 8A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 8V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V.
Weitere Produktangebote IXTX8N150L nach Preis ab 42.53 EUR bis 62.25 EUR
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IXTX8N150L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Case: PLUS247™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 250nC Reverse recovery time: 1.7µs On-state resistance: 3.6Ω Power dissipation: 700W Drain current: 8A Drain-source voltage: 1.5kV |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX8N150L | Hersteller : IXYS |
MOSFETs Standard Linear Power MOSFET |
auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX8N150L | Hersteller : IXYS |
Description: MOSFET N-CH 1500V 8A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 8V @ 250µA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
Produkt ist nicht verfügbar |