IXTX90N25L2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.87 EUR |
| 30+ | 42.94 EUR |
| 120+ | 42.77 EUR |
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Technische Details IXTX90N25L2 IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXTX90N25L2 nach Preis ab 56.99 EUR bis 78.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTX90N25L2 | IXYS |
MOSFETs 90 Amps 250V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTX90N25L2 |
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Hersteller: IXYS
MOSFETs 90 Amps 250V
MOSFETs 90 Amps 250V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 78.85 EUR |
| 10+ | 60.9 EUR |
| 120+ | 56.99 EUR |


