
IXTX90P20P IXYS

Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 315ns
Drain-source voltage: -200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 18.12 EUR |
30+ | 17.93 EUR |
120+ | 17.42 EUR |
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Technische Details IXTX90P20P IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTX90P20P nach Preis ab 17.42 EUR bis 28.69 EUR
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IXTX90P20P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Drain current: -90A On-state resistance: 44mΩ Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 205nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: PLUS247™ Reverse recovery time: 315ns Drain-source voltage: -200V |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX90P20P | Hersteller : IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90P20P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90P20P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |