IXTX90P20P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.36 EUR |
| 5+ | 17.96 EUR |
| 10+ | 17.42 EUR |
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Technische Details IXTX90P20P IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTX90P20P nach Preis ab 17.42 EUR bis 33.88 EUR
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IXTX90P20P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Type of transistor: P-MOSFET Mounting: THT Technology: PolarP™ Kind of package: tube Drain-source voltage: -200V Drain current: -90A Reverse recovery time: 315ns Gate charge: 205nC On-state resistance: 44mΩ Power dissipation: 890W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Case: PLUS247™ |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTX90P20P | Hersteller : IXYS |
MOSFETs -90.0 Amps -200V 0.044 Rds |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90P20P | Hersteller : IXYS |
Description: MOSFET P-CH 200V 90A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90P20P | Hersteller : Littelfuse |
Trans MOSFET P-CH 200V 90A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |