IXTX90P20P IXYS
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PLUS247™
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Mounting: THT
| Anzahl | Privatkunde |
|---|---|
| 4+ | 26.19 EUR |
| 5+ | 22.94 EUR |
| 10+ | 21.09 EUR |
| 30+ | 20.73 EUR |
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Technische Details IXTX90P20P IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTX90P20P nach Preis ab 35.02 EUR bis 50.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTX90P20P | IXYS |
MOSFETs -90.0 Amps -200V 0.044 Rds |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTX90P20P |
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Hersteller: IXYS
MOSFETs -90.0 Amps -200V 0.044 Rds
MOSFETs -90.0 Amps -200V 0.044 Rds
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.62 EUR |
| 10+ | 40.53 EUR |
| 120+ | 35.02 EUR |