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IXTX90P20P

IXTX90P20P IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 315ns
Drain-source voltage: -200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.12 EUR
30+17.93 EUR
120+17.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTX90P20P IXYS

Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.

Weitere Produktangebote IXTX90P20P nach Preis ab 17.42 EUR bis 28.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTX90P20P IXTX90P20P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 315ns
Drain-source voltage: -200V
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.12 EUR
30+17.93 EUR
120+17.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTX90P20P IXTX90P20P Hersteller : IXYS media-3322639.pdf MOSFETs -90.0 Amps -200V 0.044 Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27 EUR
10+25.27 EUR
30+23.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTX90P20P IXTX90P20P Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixt-90p20p-datasheet?assetguid=b4a2751b-6a18-4402-b567-2c7291ae1466 Description: MOSFET P-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.69 EUR
30+22.48 EUR
120+21.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTX90P20P IXTX90P20P Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_90p20p_datasheet.pdf.pdf Trans MOSFET P-CH 200V 90A 3-Pin(3+Tab) PLUS 247
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