| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.5 EUR |
| 10+ | 3.92 EUR |
| 70+ | 3.52 EUR |
| 560+ | 3.01 EUR |
| 5040+ | 3 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
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Technische Details IXTY01N100 IXYS
Description: MOSFET N-CH 1000V 100MA TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V.
Weitere Produktangebote IXTY01N100 nach Preis ab 1.07 EUR bis 8.02 EUR
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IXTY01N100 | IXYS |
 Description: MOSFET N-CH 1000V 100MA TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V |
auf Bestellung 4496 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO252 On-state resistance: 80Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXTY01N100 | Littelfuse |
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA |
auf Bestellung 1981 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTY01N100 | Littelfuse |
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXTY01N100 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
Description: MOSFET N-CH 1000V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
auf Bestellung 4496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 10+ | 5.26 EUR |
| 70+ | 3.88 EUR |
| 140+ | 3.53 EUR |
| 560+ | 2.99 EUR |
| IXTY01N100 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY01N100 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA
auf Bestellung 1981 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 1.67 EUR |
| 110+ | 1.57 EUR |
| 111+ | 1.5 EUR |
| 116+ | 1.37 EUR |
| 117+ | 1.31 EUR |
| 500+ | 1.07 EUR |
| IXTY01N100 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA
Trans MOSFET N-CH Si 1KV 0.1A 3-Pin(2+Tab) TO-252AA
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.49 EUR |
| 55+ | 3.17 EUR |
| 56+ | 2.99 EUR |