auf Bestellung 1729 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 2.71 EUR |
| 70+ | 1.8 EUR |
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Technische Details IXTY02N120P IXYS
Description: MOSFET N-CH 1200V 200MA TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 75Ohm @ 500mA, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V.
Weitere Produktangebote IXTY02N120P nach Preis ab 1.49 EUR bis 3.27 EUR
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IXTY02N120P | Hersteller : IXYS |
 Description: MOSFET N-CH 1200V 200MA TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 75Ohm @ 500mA, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V |
auf Bestellung 15222 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY02N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(2+Tab) DPAK |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY02N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us Type of transistor: N-MOSFET Power dissipation: 33W Case: TO252 Mounting: SMD Kind of package: tube On-state resistance: 75Ω Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.6µs Drain current: 0.2A |
Produkt ist nicht verfügbar |