auf Bestellung 5175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 2.15 EUR |
| 560+ | 2.02 EUR |
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Technische Details IXTY02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.
Weitere Produktangebote IXTY02N50D nach Preis ab 1.61 EUR bis 4.29 EUR
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IXTY02N50D | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 200MA TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
auf Bestellung 3042 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTY02N50D | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252 Polarisation: unipolar Reverse recovery time: 1µs Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 25W On-state resistance: 30Ω Gate-source voltage: ±20V Drain-source voltage: 500V Kind of channel: depletion Mounting: SMD Type of transistor: N-MOSFET Case: TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXTY02N50D | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252 Polarisation: unipolar Reverse recovery time: 1µs Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 25W On-state resistance: 30Ω Gate-source voltage: ±20V Drain-source voltage: 500V Kind of channel: depletion Mounting: SMD Type of transistor: N-MOSFET Case: TO252 |
Produkt ist nicht verfügbar |