IXTY08N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 350+ | 2.8 EUR |
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Technische Details IXTY08N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Weitere Produktangebote IXTY08N100P nach Preis ab 2.89 EUR bis 6.93 EUR
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IXTY08N100P | Hersteller : IXYS |
MOSFETs 0.8 Amps 1000V 20 Rds |
auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY08N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK |
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| IXTY08N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK |
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IXTY08N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Reverse recovery time: 750ns On-state resistance: 20Ω Drain current: 0.8A Power dissipation: 42W Drain-source voltage: 1kV Kind of channel: enhancement Case: TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTY08N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Reverse recovery time: 750ns On-state resistance: 20Ω Drain current: 0.8A Power dissipation: 42W Drain-source voltage: 1kV Kind of channel: enhancement Case: TO252 |
Produkt ist nicht verfügbar |