IXTY08N50D2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 6.53 EUR |
| 70+ | 3.17 EUR |
| 140+ | 2.88 EUR |
| 560+ | 2.44 EUR |
| 1050+ | 2.29 EUR |
| 2030+ | 2.15 EUR |
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Technische Details IXTY08N50D2 IXYS
Description: MOSFET N-CH 500V 800MA TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote IXTY08N50D2 nach Preis ab 2.53 EUR bis 6.6 EUR
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IXTY08N50D2 | Hersteller : IXYS |
MOSFETs N-CH MOSFETS 500V 800MA |
auf Bestellung 21705 Stücke: Lieferzeit 10-14 Tag (e) |
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