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Technische Details IXTY10P15T IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252, Type of transistor: P-MOSFET, Technology: TrenchP™, Power dissipation: 83W, Case: TO252, Mounting: SMD, Gate charge: 36nC, Kind of package: tube, Kind of channel: enhancement, Polarisation: unipolar, Drain-source voltage: -150V, Drain current: -10A, Gate-source voltage: ±15V, Reverse recovery time: 120ns, On-state resistance: 0.35Ω.
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IXTY10P15T | Hersteller : IXYS |
 Description: MOSFET P-CH 150V 10A TO-252 |
Produkt ist nicht verfügbar |
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IXTY10P15T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Power dissipation: 83W Case: TO252 Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -150V Drain current: -10A Gate-source voltage: ±15V Reverse recovery time: 120ns On-state resistance: 0.35Ω |
Produkt ist nicht verfügbar |