IXTY18P10T IXYS
Hersteller: IXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 26+ | 2.85 EUR |
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Technische Details IXTY18P10T IXYS
Description: MOSFET P-CH 100V 18A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Weitere Produktangebote IXTY18P10T nach Preis ab 2.85 EUR bis 7.2 EUR
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IXTY18P10T | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Reverse recovery time: 62ns |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY18P10T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 18A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 2170 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY18P10T | Hersteller : IXYS |
MOSFETs -100V -18A |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY18P10T | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 18A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |