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IXTY18P10T

IXTY18P10T IXYS


IXT_18P10T.pdf
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate-source voltage: ±15V
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
auf Bestellung 344 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
26+2.85 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTY18P10T IXYS

Description: MOSFET P-CH 100V 18A TO252, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V.

Weitere Produktangebote IXTY18P10T nach Preis ab 2.74 EUR bis 7.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTY18P10T IXTY18P10T Hersteller : IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-18P10T-Datasheet.PDF MOSFETs -100V -18A
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.2 EUR
10+7.04 EUR
70+3.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTY18P10T IXTY18P10T Hersteller : IXYS littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO252
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 2581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.53 EUR
70+3.73 EUR
140+3.4 EUR
560+2.91 EUR
1050+2.74 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH