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IXTY1N120P

IXTY1N120P IXYS


IXTY(A,P)1N120P.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
31+2.33 EUR
70+2.22 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTY1N120P IXYS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO252, Mounting: SMD, Features of semiconductor devices: standard power mosfet, Kind of package: tube, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 1A, Reverse recovery time: 900ns, On-state resistance: 20Ω, Power dissipation: 63W, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote IXTY1N120P nach Preis ab 2.22 EUR bis 2.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTY1N120P IXTY1N120P Hersteller : IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
31+2.33 EUR
70+2.22 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXTY1N120P IXTY1N120P Hersteller : Littelfuse Inc. IXTA1N120P%2C%20IXTP1N120P.pdf Description: MOSFET N-CH 1200V 1A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH