IXTY1N120P IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 28+ | 2.65 EUR |
| 31+ | 2.33 EUR |
| 70+ | 2.22 EUR |
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Technische Details IXTY1N120P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns, Type of transistor: N-MOSFET, Power dissipation: 63W, Case: TO252, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: standard power mosfet, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 1A, Reverse recovery time: 900ns, On-state resistance: 20Ω.
Weitere Produktangebote IXTY1N120P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTY1N120P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1200V 1A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 1200 V |
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