auf Bestellung 2500 Stücke:
Lieferzeit 423-427 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.79 EUR |
| 10+ | 4.88 EUR |
| 25+ | 4.59 EUR |
| 100+ | 3.94 EUR |
| 250+ | 3.71 EUR |
| 500+ | 3.50 EUR |
| 1000+ | 3.33 EUR |
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Technische Details IXTY1R6N100D2-TRL IXYS
Description: MOSFET N-CH 1000V 1.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTY1R6N100D2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
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IXTY1R6N100D2-TRL | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IXTY1R6N100D2-TRL | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
Produkt ist nicht verfügbar |