| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.89 EUR |
| 10+ | 5.81 EUR |
| 25+ | 5.46 EUR |
| 100+ | 4.69 EUR |
| 250+ | 4.41 EUR |
| 500+ | 4.16 EUR |
| 1000+ | 3.96 EUR |
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Technische Details IXTY1R6N100D2-TRL IXYS
Description: MOSFET N-CH 1000V 1.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTY1R6N100D2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXTY1R6N100D2-TRL | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IXTY1R6N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK On-state resistance: 10Ω Reverse recovery time: 970ns Pulsed drain current: 1.6A Power dissipation: 100W Gate charge: 27nC Drain current: 1.6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTY1R6N100D2-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTY1R6N100D2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 10Ω
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 10Ω
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Power dissipation: 100W
Gate charge: 27nC
Drain current: 1.6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH