| Anzahl | Preis |
|---|---|
| 1+ | 5.79 EUR |
| 10+ | 4.88 EUR |
| 25+ | 4.59 EUR |
| 100+ | 3.94 EUR |
| 250+ | 3.71 EUR |
| 500+ | 3.5 EUR |
| 1000+ | 3.33 EUR |
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Technische Details IXTY1R6N100D2-TRL IXYS
Description: MOSFET N-CH 1000V 1.6A TO252, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXTY1R6N100D2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXTY1R6N100D2-TRL | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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