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Technische Details IXTY1R6N100D2 Littelfuse
Description: MOSFET N-CH 1000V 1.6A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTY1R6N100D2 nach Preis ab 3.3 EUR bis 10.08 EUR
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IXTY1R6N100D2 | Littelfuse |
 Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Mounting: SMD Drain current: 1.6A Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO252 On-state resistance: 10Ω Reverse recovery time: 11ns Power dissipation: 100W Gate charge: 645nC Polarisation: unipolar |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
auf Bestellung 3405 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY1R6N100D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A |
auf Bestellung 4852 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTY1R6N100D2 |
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Hersteller: Littelfuse
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 350+ | 4.49 EUR |
| IXTY1R6N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.02 EUR |
| 16+ | 5.39 EUR |
| 18+ | 4.91 EUR |
| 25+ | 4.16 EUR |
| 70+ | 3.44 EUR |
| 140+ | 3.39 EUR |
| IXTY1R6N100D2 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 3405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.75 EUR |
| 70+ | 4.12 EUR |
| 140+ | 3.8 EUR |
| 560+ | 3.3 EUR |
| IXTY1R6N100D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A
auf Bestellung 4852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.08 EUR |
| 10+ | 5.93 EUR |
| 70+ | 4.8 EUR |
| 560+ | 4.41 EUR |
| 1050+ | 4.24 EUR |