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Technische Details IXTY1R6N100D2 Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1.6A, Power dissipation: 100W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 10Ω, Mounting: SMD, Kind of package: tube, Kind of channel: depletion, Reverse recovery time: 11ns, Gate charge: 645nC.
Weitere Produktangebote IXTY1R6N100D2 nach Preis ab 3.39 EUR bis 10.45 EUR
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IXTY1R6N100D2 | Littelfuse |
 Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A |
auf Bestellung 6918 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY1R6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 |
auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTY1R6N100D2 |
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Hersteller: Littelfuse
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 350+ | 4.39 EUR |
| IXTY1R6N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.02 EUR |
| 16+ | 5.39 EUR |
| 18+ | 4.91 EUR |
| 25+ | 4.16 EUR |
| 70+ | 3.44 EUR |
| 140+ | 3.39 EUR |
| IXTY1R6N100D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A
auf Bestellung 6918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.41 EUR |
| 10+ | 5.21 EUR |
| 70+ | 4.77 EUR |
| 560+ | 4.25 EUR |
| IXTY1R6N100D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Description: MOSFET N-CH 1000V 1.6A TO252
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.45 EUR |
| 10+ | 6.95 EUR |
| 70+ | 5.2 EUR |
| 140+ | 4.75 EUR |
| 560+ | 4.07 EUR |