auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 2.59 EUR |
| 140+ | 2.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTY1R6N100D2 Littelfuse
Description: MOSFET N-CH 1000V 1.6A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTY1R6N100D2 nach Preis ab 2.7 EUR bis 6.51 EUR
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IXTY1R6N100D2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 100W Case: TO252 Mounting: SMD Kind of package: tube Reverse recovery time: 11ns Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 10Ω Gate charge: 645nC Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 317 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY1R6N100D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 100W Case: TO252 Mounting: SMD Kind of package: tube Reverse recovery time: 11ns Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 10Ω Gate charge: 645nC Kind of channel: depletion Gate-source voltage: ±20V |
auf Bestellung 317 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | Hersteller : IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A |
auf Bestellung 14877 Stücke: Lieferzeit 423-427 Tag (e) |
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IXTY1R6N100D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
auf Bestellung 3405 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY1R6N100D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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IXTY1R6N100D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |