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IXTY1R6N50D2

IXTY1R6N50D2 IXYS


IXTA(P,Y)1R6N50D2.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Power dissipation: 100W
Case: TO252
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Gate-source voltage: ±20V
Reverse recovery time: 400ns
On-state resistance: 2.3Ω
auf Bestellung 331 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
21+3.43 EUR
25+2.87 EUR
30+2.76 EUR
50+2.6 EUR
Mindestbestellmenge: 16
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Technische Details IXTY1R6N50D2 IXYS

Description: MOSFET N-CH 500V 1.6A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.

Weitere Produktangebote IXTY1R6N50D2 nach Preis ab 2.76 EUR bis 6.07 EUR

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IXTY1R6N50D2 IXTY1R6N50D2 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_1R6N50_Datasheet.PDF MOSFETs N-CH MOSFETS (D2) 500V 1.6A
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6 EUR
10+5.95 EUR
70+3.4 EUR
560+3.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTY1R6N50D2 IXTY1R6N50D2 Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixt-1r6n50-datasheet?assetguid=c560f67d-8a9d-4339-87e4-5b2881bb8dbd Description: MOSFET N-CH 500V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
70+3.34 EUR
140+3.09 EUR
560+2.76 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH