IXTY2N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 1341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 70+ | 2.9 EUR |
| 140+ | 2.83 EUR |
| 560+ | 2.59 EUR |
| 1050+ | 2.43 EUR |
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Technische Details IXTY2N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V.
Weitere Produktangebote IXTY2N100P nach Preis ab 2.26 EUR bis 71.5 EUR
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IXTY2N100P | Hersteller : IXYS |
MOSFETs 2 Amps 1000V 7.5 Rds |
auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY2N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY2N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY2N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |