auf Bestellung 275 Stücke:
Lieferzeit 612-616 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 3.04 EUR |
| 25+ | 2.87 EUR |
| 70+ | 2.45 EUR |
| 560+ | 2.02 EUR |
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Technische Details IXTY2N65X2 IXYS
Description: MOSFET N-CH 650V 2A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IXTY2N65X2 nach Preis ab 2.05 EUR bis 4.82 EUR
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IXTY2N65X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 2A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY2N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 4.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTY2N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 4.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Technology: X2-Class |
Produkt ist nicht verfügbar |