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IXTY2N65X2

IXTY2N65X2 Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_2n65x2_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
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70+2.27 EUR
140+2.05 EUR
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Technische Details IXTY2N65X2 Littelfuse Inc.

Description: MOSFET N-CH 650V 2A TO252, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.

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IXTY2N65X2 IXTY2N65X2 IXYS media-3319192.pdf MOSFETs TO252 650V 2A N-CH X2CLASS
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IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 4.3nC
Reverse recovery time: 137ns
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IXTY2N65X2 media-3319192.pdf
IXTY2N65X2
Hersteller: IXYS
MOSFETs TO252 650V 2A N-CH X2CLASS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 4.3nC
Reverse recovery time: 137ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH