auf Bestellung 780 Stücke:
Lieferzeit 374-378 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 5.58 EUR |
| 25+ | 5.26 EUR |
| 70+ | 3.56 EUR |
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Technische Details IXTY2P50PA Littelfuse
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-252, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IXTY2P50PA nach Preis ab 3.29 EUR bis 7.3 EUR
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IXTY2P50PA | Hersteller : IXYS |
 MOSFETs Discrete MOSFET -2A -500V PolarP TO-252 |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY2P50PA | Hersteller : Littelfuse |
Trans MOSFET P-CH 500V 2A 3-Pin(2+Tab) TO-252 |
Produkt ist nicht verfügbar |
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| IXTY2P50PA | Hersteller : IXYS |
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IXTY2P50PA | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -2A; Idm: -6A; 58W Mounting: SMD Technology: PolarP™ Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Pulsed drain current: -6A Drain current: -2A Gate charge: 11.9nC Reverse recovery time: 300ns Power dissipation: 58W On-state resistance: 4.2Ω Gate-source voltage: ±20V Case: TO252 Kind of channel: enhancement |
Produkt ist nicht verfügbar |