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Technische Details IXTY32P05T-TRL IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA, Case: DPAK; TO252AA, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, On-state resistance: 39mΩ, Power dissipation: 83W, Gate-source voltage: 15V, Drain current: 32A, Drain-source voltage: 50V.
Weitere Produktangebote IXTY32P05T-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXTY32P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA Case: DPAK; TO252AA Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET On-state resistance: 39mΩ Power dissipation: 83W Gate-source voltage: 15V Drain current: 32A Drain-source voltage: 50V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTY32P05T-TRL |
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH