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IXXH100N60C3

IXXH100N60C3 IXYS


littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf Hersteller: IXYS
Description: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
auf Bestellung 19 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.81 EUR
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Technische Details IXXH100N60C3 IXYS

Description: IGBT 600V 190A 830W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 30ns/90ns, Switching Energy: 2mJ (on), 950µJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 190 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 380 A, Power - Max: 830 W.

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IXXH100N60C3 IXXH100N60C3 Hersteller : IXYS media-3320407.pdf IGBT Transistors XPT IGBT C3-Class 600V/190Amp
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.02 EUR
10+ 26.07 EUR
30+ 25.68 EUR
60+ 24.9 EUR
120+ 23.69 EUR
IXXH100N60C3 IXXH100N60C3 Hersteller : IXYS IXXH100N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH100N60C3 IXXH100N60C3 Hersteller : IXYS IXXH100N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Produkt ist nicht verfügbar