auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.74 EUR |
| 10+ | 16.46 EUR |
| 120+ | 14.22 EUR |
| 270+ | 13.78 EUR |
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Technische Details IXXH100N60C3 IXYS
Description: IGBT 600V 190A 830W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 30ns/90ns, Switching Energy: 2mJ (on), 950µJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 190 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 380 A, Power - Max: 830 W.
Weitere Produktangebote IXXH100N60C3 nach Preis ab 18.8 EUR bis 18.8 EUR
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IXXH100N60C3 | Hersteller : IXYS |
 Description: IGBT 600V 190A 830W TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 190 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 380 A Power - Max: 830 W |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH100N60C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 830W Turn-off time: 0.22µs Turn-on time: 95s Kind of package: tube Case: TO247-3 Pulsed collector current: 380A Collector current: 100A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Gate charge: 150nC Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXH100N60C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 830W Turn-off time: 0.22µs Turn-on time: 95s Kind of package: tube Case: TO247-3 Pulsed collector current: 380A Collector current: 100A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Gate charge: 150nC Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |