IXXH110N65B4 IXYS
Hersteller: IXYS
Description: IGBT PT 650V 250A TO-247
Power - Max: 880 W
Current - Collector Pulsed (Icm): 570 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 250 A
Part Status: Active
Gate Charge: 183 nC
Test Condition: 400V, 55A, 2Ohm, 15V
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Td (on/off) @ 25°C: 26ns/146ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXXH110N65B4 IXYS
Description: IGBT PT 650V 250A TO-247, Power - Max: 880 W, Current - Collector Pulsed (Icm): 570 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 250 A, Part Status: Active, Gate Charge: 183 nC, Test Condition: 400V, 55A, 2Ohm, 15V, Switching Energy: 2.2mJ (on), 1.05mJ (off), Td (on/off) @ 25°C: 26ns/146ns, IGBT Type: PT, Supplier Device Package: TO-247 (IXTH), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Reverse Recovery Time (trr): 40 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXXH110N65B4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXXH110N65B4 | Hersteller : IXYS |
IGBTs TO247 650V 110A XPT |
Produkt ist nicht verfügbar |
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| IXXH110N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3 Type of transistor: IGBT Power dissipation: 880W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 570A Collector-emitter voltage: 650V Gate charge: 183nC Collector current: 250A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |