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IXXH140N65C4 Littelfuse

littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf.pdf Hersteller: Littelfuse
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
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Technische Details IXXH140N65C4 Littelfuse

Description: DISC IGBT XPT-GENX4 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 43ns/240ns, Switching Energy: 4.9mJ (on), 1.7mJ (off), Test Condition: 400V, 75A, 4.7Ohm, 15V, Gate Charge: 250 nC, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 730 A, Power - Max: 1200 W.

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IXXH140N65C4 IXXH140N65C4 Hersteller : IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Anzahl je Verpackung: 1 Stücke
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IXXH140N65C4 Hersteller : IXYS media?resourcetype=datasheets&itemid=1337f9d6-e395-4c14-b9ae-2e1a8fdfb915&filename=littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
Produkt ist nicht verfügbar
IXXH140N65C4 IXXH140N65C4 Hersteller : IXYS media-3319591.pdf IGBT Transistors IGBT XPT
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IXXH140N65C4 IXXH140N65C4 Hersteller : IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Produkt ist nicht verfügbar