IXXH150N60C3 IXYS
Hersteller: IXYSDescription: IGBT PT 600V 300A TO-247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.83 EUR |
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Technische Details IXXH150N60C3 IXYS
Description: IGBT PT 600V 300A TO-247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 34ns/120ns, Switching Energy: 3.4mJ (on), 1.8mJ (off), Test Condition: 400V, 75A, 2Ohm, 15V, Gate Charge: 200 nC, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 1360 W.
Weitere Produktangebote IXXH150N60C3 nach Preis ab 12.54 EUR bis 24.48 EUR
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IXXH150N60C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Gate charge: 200nC Kind of package: tube Turn-off time: 230ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 700A Turn-on time: 0.1µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH150N60C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Gate charge: 200nC Kind of package: tube Turn-off time: 230ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 700A Turn-on time: 0.1µs |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH150N60C3 | Hersteller : IXYS |
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auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH150N60C3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 600V 300A 1360000mW |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |