IXXH30N60B3D1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 10.32 EUR |
| 10+ | 7.28 EUR |
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Technische Details IXXH30N60B3D1 IXYS
Description: IGBT PT 600V 60A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 23ns/97ns, Switching Energy: 550µJ (on), 500µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 39 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 115 A, Power - Max: 270 W.
Weitere Produktangebote IXXH30N60B3D1 nach Preis ab 4.82 EUR bis 11.53 EUR
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IXXH30N60B3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Case: TO247AD Mounting: THT Kind of package: tube Power dissipation: 270W Gate charge: 39nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 115A Turn-on time: 23ns Turn-off time: 125ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH30N60B3D1 | Hersteller : IXYS |
IGBTs XPT 600V IGBT GenX3 XPT IGBT |
auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH30N60B3D1 | Hersteller : IXYS |
Description: IGBT PT 600V 60A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/97ns Switching Energy: 550µJ (on), 500µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 39 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 115 A Power - Max: 270 W |
auf Bestellung 638 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH30N60B3D1 | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXXH30N60B3D1 - IGBT, 60 A, 1.66 V, 270 W, 600 V, TO-247AD, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.66V usEccn: EAR99 euEccn: NLR Verlustleistung: 270W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (12-Jan-2017) |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH30N60B3D1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXXH30N60B3D1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |