IXXH30N65B4 IXYS
Hersteller: IXYSDescription: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.28 EUR |
| 30+ | 6.27 EUR |
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Technische Details IXXH30N65B4 IXYS
Description: IGBT PT 650V 65A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 32ns/170ns, Switching Energy: 1.55mJ (on), 480µJ (off), Test Condition: 400V, 30A, 15Ohm, 15V, Gate Charge: 52 nC, Part Status: Active, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 146 A, Power - Max: 230 W.
Weitere Produktangebote IXXH30N65B4 nach Preis ab 5.65 EUR bis 11.11 EUR
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auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH30N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 206ns Pulsed collector current: 146A Collector current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXH30N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 206ns Pulsed collector current: 146A Collector current: 30A |
Produkt ist nicht verfügbar |