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IXXH40N65B4 IXYS
Hersteller: IXYSDescription: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 6.95 EUR |
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Technische Details IXXH40N65B4 IXYS
Description: IGBT 650V 120A 455W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 28ns/144ns, Switching Energy: 1.4mJ (on), 560µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 77 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 455 W.
Weitere Produktangebote IXXH40N65B4 nach Preis ab 4.95 EUR bis 7.28 EUR
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IXXH40N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 167 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH40N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH40N65B4 | Hersteller : IXYS |
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT |
Produkt ist nicht verfügbar |