IXXH40N65C4D1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 215A
Turn-on time: 71ns
Turn-off time: 142ns
Type of transistor: IGBT
Power dissipation: 455W
Kind of package: tube
Gate charge: 68nC
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
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Technische Details IXXH40N65C4D1 IXYS
Description: IGBT PT 650V 110A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 20ns/100ns, Switching Energy: 1.6mJ (on), 420µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 68 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 215 A, Power - Max: 455 W.
Weitere Produktangebote IXXH40N65C4D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXXH40N65C4D1 | Hersteller : IXYS |
Description: IGBT PT 650V 110A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 20ns/100ns Switching Energy: 1.6mJ (on), 420µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 68 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 215 A Power - Max: 455 W |
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IXXH40N65C4D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX4 TO-247AD |
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IXXH40N65C4D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 215A Turn-on time: 71ns Turn-off time: 142ns Type of transistor: IGBT Power dissipation: 455W Kind of package: tube Gate charge: 68nC Technology: GenX4™; Trench; XPT™ |
Produkt ist nicht verfügbar |