IXXH50N60C3D1 IXYS
Hersteller: IXYSDescription: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.61 EUR |
| 30+ | 8.61 EUR |
| 120+ | 7.29 EUR |
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Technische Details IXXH50N60C3D1 IXYS
Description: IGBT PT 600V 100A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 24ns/62ns, Switching Energy: 720µJ (on), 330µJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.
Weitere Produktangebote IXXH50N60C3D1 nach Preis ab 7.69 EUR bis 16.9 EUR
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IXXH50N60C3D1 | Hersteller : IXYS |
IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked |
auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH50N60C3D1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD |
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IXXH50N60C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 600W Case: TO247-3 Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |