IXXH60N65B4 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.12 EUR |
11+ | 6.54 EUR |
12+ | 6.19 EUR |
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Technische Details IXXH60N65B4 IXYS
Description: IGBT 650V 116A 455W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 37ns/145ns, Switching Energy: 3.13mJ (on), 1.15mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 455 W.
Weitere Produktangebote IXXH60N65B4 nach Preis ab 6.19 EUR bis 9.12 EUR
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IXXH60N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH60N65B4 | Hersteller : IXYS |
Description: IGBT 650V 116A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 455 W |
auf Bestellung 1230 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH60N65B4 | Hersteller : IXYS | IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT |
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