IXXH60N65B4H1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 16.43 EUR |
| 7+ | 11.21 EUR |
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Technische Details IXXH60N65B4H1 IXYS
Description: IGBT PT 650V 116A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 37ns/145ns, Switching Energy: 3.13mJ (on), 1.15mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 230 A, Power - Max: 380 W.
Weitere Produktangebote IXXH60N65B4H1 nach Preis ab 9.61 EUR bis 18.92 EUR
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IXXH60N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Power dissipation: 536W Case: TO247-3 Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 265A Turn-on time: 94ns Turn-off time: 208ns |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH60N65B4H1 | Hersteller : IXYS |
Description: IGBT PT 650V 116A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 230 A Power - Max: 380 W |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH60N65B4H1 | Hersteller : IXYS |
IGBTs 650V/106A TRENCH IGBT GENX4 XPT |
auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH60N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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| IXXH60N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 116A 455W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |